SI6415DQ |
RFQ for SI6415DQ Required Field |
 |
| Product | Manufacturers | Pack | D/C | ||||||||||||||||
| SI6415DQ | - | - | 99 |
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 20V).
Typical Application |
Features |
| • Battery protection• DC/DC conversion• Power management• Load switch | • 6.5 A, 30 V RDS(ON) = 19 m @ VGS = 10 V RDS(ON) = 30 m @ VGS = 4.5 V• Extended VGSS range (±20V) for battery applications• High performance trench technology for extremelylow RDS(ON)• Low profile TSSOP-8 package |
| Symbol | Parameter | Ratings | Units | |
| VDSS | Drain-Source Voltage | -30 | V | |
| VGSS | Gate-Source Voltage | ±20 | V | |
| ID | Drain Current Continuous | (Note 1a) | -6.5 | A |
|
Pulsed |
-30 | |||
| PD | Power Dissipation | (Note 1a) | 1.3 | W |
| (Note 1b) | 0.6 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | -55 to +150 | °C | |
